SI4463-915-DK【PDF 11/56 页】KIT DEV WIRELESS SI4463 915MHZ

您好，
买卖IC网欢迎您。
请登录
免费注册

7页 8页 9页 10页 [11页]12页 13页 14页 15页

Si4464/63/61/60

Table 5. Auxiliary Block Specifications 1

Parameter

Temperature Sensor

Sensitivity 2

Symbol

TS S

Test Condition

Min

—

Typ

4.5

Max

—

Unit

ADC

Codes/

°C

Low Battery Detector

LBD RES

—

50

—

mV

Resolution

Microcontroller Clock

Output Frequency Range 3

F MC

Configurable to Fxtal or Fxtal

divided by 2, 3, 7.5, 10, 15, or

32.768K

—

Fxtal

Hz

30 where Fxtal is the reference

XTAL frequency. In addition,

32.768 kHz is also supported.

Temperature Sensor

Conversion 2

XTAL Range 4

30 MHz XTAL Start-Up Time

TEMP CT

XTAL Range

t 30M

Programmable setting

Using XTAL and board layout in

—

25

—

3

250

—

32

—

ms

MHz

μs

reference design. Start-up time

will vary with XTAL type and

board layout.

30 MHz XTAL Cap

Resolution 2

32 kHz XTAL Start-Up Time 2

32 kHz Accuracy using

Internal RC Oscillator 2

POR Reset Time

30M RES

t 32k

32KRC RES

t POR

—

—

—

—

70

2

2500

—

—

—

—

5

fF

sec

ppm

ms

Notes:

1. All specification guaranteed by production test unless otherwise noted. Production test conditions and max limits are

listed in the "Production Test Conditions" section in "1.1. Definition of Test Conditions" on page 14.

2. Guaranteed by qualification. Qualification test conditions are listed in the "Qualification Test Conditions" section in "1.1.

Definition of Test Conditions" on page 14.

3. Microcontroller clock frequency tested in production at 1 MHz, 30 MHz and 32.768 kHz. Other frequencies tested in

bench characterization.

4. XTAL Range tested in production using an external clock source (similar to using a TCXO).

Rev 1.2

11

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

SI4465ADY-T1-GE3 MOSFET P-CH 8V 13.7A 8SOIC

SI4466DY-T1-GE3 MOSFET N-CH 20V 9.5A 8-SOIC

SI4470EY-T1-GE3 MOSFET N-CH D-S 60V 8-SOIC

SI4472DY-T1-GE3 MOSFET N-CH D-S 150V 8-SOIC

SI4477DY-T1-GE3 MOSFET P-CH D-S 20V 8-SOIC

SI4483EDY-T1-GE3 MOSFET P-CH D-S 30V 8-SOIC

SI4484EY-T1-GE3 MOSFET N-CH 100V 8-SOIC

SI4488DY-T1-GE3 MOSFET N-CH 150V 8-SOIC

相关代理商/技术参数

SI4463-915-PDK 制造商:Silicon Laboratories Inc 功能描述:KIT DEV WIRELESS SI4463 915MHZ

Si4463-B0B-FM 功能描述:射频收发器 TRX ROM 63 EZRadioPRO RoHS:否制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray

Si4463-B0B-FMR 功能描述:射频收发器 TRX ROM 63 EZRadioPRO RoHS:否制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray

SI4463B1BFM 制造商:Silicon Laboratories Inc 功能描述:

Si4463-B1B-FM 功能描述:射频收发器 TRX RoHS:否制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray

Si4463-B1B-FMR 功能描述:射频收发器 TRX RoHS:否制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray

SI4463BDY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 2.5-V (G-S) MOSFET

SI4463BDY-E3 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 2.5-V (G-S) MOSFET